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| FDS6673BZ P-Channel PowerTrench(R) MOSFET January 2006 FDS6673BZ P-Channel PowerTrench(R) MOSFET -30V, -14.5A, 7.8m General Description This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features Max rDS(on) = 7.8m, VGS = -10V, ID = -14.5A Max rDS(on) = 12m, VGS = -4.5V, ID = -12A Extended VGS range (-25V) for battery applications HBM ESD protection level of 6.5kV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Operating and Storage Temperature Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation (Note1a) (Note1b) (Note1c) (Note1a) Ratings -30 25 -14.5 -75 2.5 1.2 1.0 -55 to 150 C W Units V V A A Thermal Characteristics RJA RJC Thermal Resistance , Junction to Ambient (Note 1a) Thermal Resistance , Junction to Case (Note 1) 50 25 C/W C/W Package Marking and Ordering Information Device Marking FDS6673BZ Device FDS6673BZ Reel Size 13'' Tape Width 12mm Quantity 2500 units (c)2006 Fairchild Semiconductor Corporation FDS6673BZ Rev. B 1 www.fairchildsemi.com FDS6673BZ P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -24V, VGS = 0V VGS = 25V, VDS = 0V -30 -20 -1 10 V mV/C A A On Characteristics (Note 2) VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V , ID = -14.5A VGS = -4.5V, ID = -12A VGS = -10V, ID = -14.5A TJ = 125oC VDS = -5V, ID = -14.5A -1 -1.9 8.1 6.5 9.6 9.7 60 7.8 12 12 S m -3 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz 3500 600 600 4700 800 900 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain Charge VDS = -15V, VGS = -10V, ID = -14.5A VDS = -15V, VGS = -5V, ID = -14.5A VDD = -15V, ID = -1A VGS = -10V, RGS = 6 14 16 225 105 88 46 8 23.5 26 29 36 167 124 65 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A Reverse Recovery Time Reverse Recovery Charge IF = 14.5A, di/dt = 100A/s IF = 14.5A, di/dt = 100A/s -0.7 -1.2 45 34 V ns nC Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50 oC/W (10 sec) when mounted on a 1 in2 pad of 2 oz copper b) 105 oC/W when mounted on a .04 in2 pad of 2 oz copper c) 125 oC/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 2 FDS6673BZ Rev. B www.fairchildsemi.com FDS6673BZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 80 70 -ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = - 4V VGS = - 10V VGS = - 5V VGS = - 4.5V VGS = - 3.5V VGS = - 3V 60 50 40 30 20 10 0 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 10 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -3.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -4V VGS = -4.5V VGS = -5V VGS = -10V 20 30 40 50 60 -ID, DRAIN CURRENT(A) 70 80 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 25 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -80 -40 0 40 80 120 o ID = -14.5A rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) VGS = -10V 20 15 10 5 0 ID = -7A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX TJ = 150oC TJ = 25oC 160 2 TJ, JUNCTION TEMPERATURE ( C) 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 80 -ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS = -6V TJ = 150oC Figure 4. On-Resistance vs Gate to Source Voltage 100 00 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V 60 10 1 0.1 0.01 TJ = 150oC 40 TJ = 25oC TJ = 25oC 20 TJ = -55oC TJ = -55oC 0 2.0 2.5 3.0 3.5 4.0 4.5 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDS6673BZ Rev. B www.fairchildsemi.com FDS6673BZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 8 6 4 2 0 VDD = -10V VDD = -15V VDD = -20V 6000 Ciss Coss CAPACITANCE (pF) 1000 Crss f = 1MHz VGS = 0V 0 20 40 60 80 100 100 0.1 1 10 30 Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 1000 100 10 -Ig(uA) TJ = 150oC Figure 8. Capacitance vs Drain to Source Voltage 40 -IAS, AVALANCHE CURRENT(A) 1 0.1 0.01 1E-3 1E-4 0 5 10 15 20 -VGS(V) 25 30 35 TJ = 25oC 10 TJ = 25oC TJ = 125oC 1 -2 10 10 -1 10 10 10 tAV, TIME IN AVALANCHE(ms) 0 1 2 10 3 Figure 9. Ig vs VGS Figure 10. Unclamped Inductive Switching Capability 16 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 100 10us 12 VGS = -10V 10 100us 1ms 8 VGS = -4.5V 1 1ms 100ms 4 0.1 1s OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ=MAX RATED TA=25oC DC 0 25 50 75 100 125 150 0.01 0.1 TA, AMBIENT TEMPERATURE(oC) 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area 4 FDS6673BZ Rev. B www.fairchildsemi.com FDS6673BZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted P(Pk), PEAK TRANSIENT POWER (W) 1000 VGS = -10V TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 100 150 - T A ----------------------125 10 SINGLE PULSE 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 1 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZJA 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 1E-3 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION(s) Figure 14. Transient Thermal Response Curve 5 FDS6673BZ Rev. B www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 |
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